US Patent Issued to Tokyo Electron on April 14 for "Methods for wet atomic layer etching of molybdenum in aqueous solution" (Texas Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,691, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for wet atomic layer etching of molybdenum in aqueous solution" was invented by Tulashi Dahal (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. In the wet ALE processes and methods disclosed herein, self-limiting behavior is provided in the oxidation step by addin...