US Patent Issued to Tokyo Electron on April 14 for "Methods for controlling spin-on self-assembled monolayer (SAM) selectivity" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,685, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for controlling spin-on self-assembled monolayer (SAM) selectivity" was invented by Lior Huli (Albany, N.Y.), Nathan Antonovich (Albany, N.Y.) and Dina Triyoso (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of methods are provided to control formation of self-assembled monolayers (SAMs) used in an area-selective deposition (ASD) process, and thus, prevent defects in the ASD process. In the disclosed embodiments, a SAM structure is formed via a spin-on process that includes: (a) a spin coating step for coating a surface of a semiconductor...