US Patent Issued to Tokyo Electron on April 14 for "Method and apparatus for in-situ dry development" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,710, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method and apparatus for in-situ dry development" was invented by Steven Grzeskowiak (Albany, N.Y.) and Eric Chih-Fang Liu (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment etching tool includes an etch chamber for plasma etching a first wafer to be processed; a transfer chamber coupled to the etch chamber; a first run path between the transfer chamber and the etch chamber, the first run path including a path for moving the first wafer to be processed from the transfer chamber to the etch chamber, where the etching tool is configured to dry develop the f...