US Patent Issued to TOKUYAMA on Sept. 22 for "Inhibitor for RuO 4 gas generation and method for inhibiting RuO 4 gas generation" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,741,925, issued on Sept. 22, was assigned to TOKUYAMA Corp. (Yamaguchi, Japan).

"Inhibitor for RuO 4 gas generation and method for inhibiting RuO 4 gas generation" was invented by Tomoaki Sato (Yamaguchi, Japan), Yuki Kikkawa (Yamaguchi, Japan), Takafumi Shimoda (Yamaguchi, Japan) and Takayuki Negishi (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specific...