US Patent Issued to The University of Hong Kong on May 5 for "System and method for forming large-area electronic-grade metal chalcogen thin films" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,146, issued on May 5, was assigned to The University of Hong Kong (China).

"System and method for forming large-area electronic-grade metal chalcogen thin films" was invented by Lain-Jong Li (Hsinchu City, Taiwan), Yi Wan (Hong Kong) and Yu-Ming Chang (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes inlets, a pre-reaction region, and outlets. The inlets receive precursors and...