US Patent Issued to THE TRUSTEES OF INDIANA UNIVERSITY on Sept. 8 for "Method of optimizing geometric and electrostatic parameters of an electrostatic linear ion trap (ELIT)" (Indiana Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,775, issued on Sept. 8, was assigned to THE TRUSTEES OF INDIANA UNIVERSITY (Bloomington, Ind.).

"Method of optimizing geometric and electrostatic parameters of an electrostatic linear ion trap (ELIT)" was invented by Martin F. Jarrold (Bloomington, Ind.) and Daniel Botamanenko (Bloomington, Ind.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for optimizing an electrostatic linear ion trap (ELIT) for mass-to-charge (m/z) measurement resolution may include determining initial electrostatic and geometric parameters of the ELIT, modifying at least one of the initial electrostatic parameters to produce a resulting set of modified electrostatic p...