US Patent Issued to The Johns Hopkins University on June 23 for "Ultra-stable silicon anode by three-dimensional nanoarchitecture design" (Maryland Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,188, issued on June 23, was assigned to The Johns Hopkins University (Baltimore).

"Ultra-stable silicon anode by three-dimensional nanoarchitecture design" was invented by Mingwei Chen (Cockeysville, Md.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrode includes an electrically conductive porous graphene core; a silicon layer disposed on an internal surface of the porous graphene core; and an ion-conductive hybrid silicate layer disposed on the silicon layer."

The patent was filed on March 16, 2021, under Application No. 17/912,199.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacg...