US Patent Issued to The Hong Kong University of Science and Technology on May 5 for "Normally-off p -GaN gate double channel HEMT and the manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,012, issued on May 5, was assigned to The Hong Kong University of Science and Technology (Hong Kong).

"Normally-off p -GaN gate double channel HEMT and the manufacturing method thereof" was invented by Jing Chen (Hong Kong), Hang Liao (Hong Kong), Zheyang Zheng (Hong Kong) and Tao Chen (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) device including a substrate and a semiconductor stack is provided. The semiconductor stack comprises a lower channel layer, an insertion layer (ISL) positioned above the lower channel layer for confining electrons in the lower channel layer, an upper channel layer, an i...