US Patent Issued to The Hong Kong University of Science and Technology on July 14 for "Method of fabricating nanoporous Zn anodes and the applications in Zn batteries" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,153, issued on July 14, was assigned to The Hong Kong University of Science and Technology (Hong Kong).

"Method of fabricating nanoporous Zn anodes and the applications in Zn batteries" was invented by Qing Chen (Hong Kong), Liangyu Li (Hong Kong) and Yung Chak Anson Tsang (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a free-standing nanoporous Zn is provided. The method includes compacting a predetermined amount of Zn compound precursor into a form of an anode; controlling a thickness of the Zn compound precursor to obtain desirable porosity; and reducing the Zn compound precursor in an electrochemical cell having an ...