US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on March 3 for "Wafer-scale separation and transfer of GaN material" (Maryland, Virginia Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,716, issued on March 3, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Wafer-scale separation and transfer of GaN material" was invented by Francis J. Kub (Arnold, Md.), Andrew D. Koehler (Alexandria, Va.), Travis J. Anderson (Alexandria, Va.), Karl D. Hobart (Alexandria, Va.) and Marko J. Tadjer (Vienna, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer-scale method of making gallium nitride (GaN) device die is provided. In embodiments, the method includes: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etcha...