US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on July 28 for "Gallium oxide planar MOS-Schottky rectifier" (Virginia, Maryland Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,466, issued on July 28, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Gallium oxide planar MOS-Schottky rectifier" was invented by Marko J. Tadjer (Vienna, Va.), Hannah N. Masten (Alexandria, Va.), Joseph A. Spencer (Springfield, Va.), Alan G. Jacobs (Rockville, Md.), Karl D. Hobart (Alexandria, Va.) and Yuhao Zhang (Blacksburg, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Ga2O3-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier d...