US Patent Issued to The 13th Research Institute of China Electronics Technology Group on Sept. 1 for "Method for preparing Schottky diode and Schottky diode" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,181, issued on Sept. 1, was assigned to The 13th Research Institute of China Electronics Technology Group Corp. (Shijiazhuang, China).

"Method for preparing Schottky diode and Schottky diode" was invented by Yuanjie Lv (Shijiazhuang, China), Yuangang Wang (Shijiazhuang, China), Hongyu Liu (Shijiazhuang, China), Zhe Qin (Shijiazhuang, China), Baodi Li (Shijiazhuang, China), Baorui Sun (Shijiazhuang, China), Guo Zhou (Shijiazhuang, China), Aimin Bu (Shijiazhuang, China) and Zhihong Feng (Shijiazhuang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: oxidizing a target N+-type gallium oxide substrate to obtain a first N--type gal...