US Patent Issued to The 13th Research Institute of China Electronics Technology Group on Feb. 24 for "Preparation device and method for semi-insulating indium phosphide" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,861, issued on Feb. 24, was assigned to The 13th Research Institute of China Electronics Technology Group Corp. (Shijiazhuang, China).

"Preparation device and method for semi-insulating indium phosphide" was invented by Shujie Wang (Shijiazhuang, China), Niefeng Sun (Shijiazhuang, China), Senfeng Xu (Shijiazhuang, China), Tongnian Sun (Shijiazhuang, China) and Huisheng Liu (Shijiazhuang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation device and method of semi-insulated indium phosphide belong to the field of crystal preparation. The preparation device includes a furnace body, and a crucible, an injector and an in-situ annealing d...