US Patent Issued to TEXAS INSTRUMENTS on Oct. 27 for "Half-bridge GaN driver with integrated GaN FET" (American, Indian Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,772, issued on Oct. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Half-bridge GaN driver with integrated GaN FET" was invented by Anant Kamath (Bangalore, India), Taisuke Kazama (Plano, Texas) and Sombuddha Chakraborty (Redwood City, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit is provided which comprises a transistor and a driver coupled to a gate of the transistor. In at least one example, the driver controls an operation of the transistor, wherein the driver is operable in a first configuration as a low-side gate driver for a voltage regulator, and wherein the transistor is operable in the first configuratio...