US Patent Issued to TEXAS INSTRUMENTS on Oct. 27 for "Diode with intrinsic epitaxial layer" (Chinese, American, Indian Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,725, issued on Oct. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Diode with intrinsic epitaxial layer" was invented by Tian Ping Lv (Yibin, China), Yuanchun Wu (Sichuan, China), Sunglyong Kim (Allen, Texas), Kartikey Thakar (Bangalore, India) and Cheng Yuan Xu (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes an n-type substrate having a first concentration of n-type dopants, an intrinsic epitaxial layer on the n-type substrate having a second concentration of n-type dopants that is less than the first concentration of n-type dopants, an n-type epitaxial layer on the intrinsic epitaxial layer havin...