US Patent Issued to TEXAS INSTRUMENTS on Nov. 3 for "Nonvolatile memory with UV attenuating structural arrangement" (Texas Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,273, issued on Nov. 3, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Nonvolatile memory with UV attenuating structural arrangement" was invented by Zeng Zhang (Allen, Texas), Jack Qian (Plano, Texas), Keith Jarreau (Dallas), Tamer San (Plano, Texas) and Mark Eskew (Carrollton, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit comprises a transistor extending into a semiconductor substrate and having a gate structure having major and minor axes parallel to a surface of the semiconductor substrate, and a UV-opaque sheet structure vertically spaced apart from a top surface of the gate structure by a first distance and includ...