US Patent Issued to TEXAS INSTRUMENTS on May 19 for "Merged trenches surrounded by wider trench for isolating semiconductor devices" (Texas, California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,488, issued on May 19, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Merged trenches surrounded by wider trench for isolating semiconductor devices" was invented by Hao Yang (Allen, Texas), Asad Haider (Plano, Texas), Guruvayurappan Mathur (Allen, Texas), Abbas Ali (Plano, Texas), Alexei Sadovnikov (Sunnyvale, Calif.) and Umamaheswari Aghroam (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Active semiconductor devices in an integrated circuit are provided lateral electrical isolation by surrounding narrow deep trench isolation regions that are merged at shared portions of the narrow deep trench isolation regions. A wide deep tre...