US Patent Issued to TEXAS INSTRUMENTS on March 24 for "Two-rotation gate-edge diode leakage reduction for MOS transistors" (Texas Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,236, issued on March 24, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Two-rotation gate-edge diode leakage reduction for MOS transistors" was invented by Brian Edward Hornung (Richardson, Texas) and Mahalingam Nandakumar (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit is fabricated by forming transistors having gates of orthogonal orientations and implanting, at two first rotations, a first pocket implant using a first dopant type with a masking pattern on a substrate surface layer, the two first rotations respectively forming two first pocket implantation angles and two first pocket implantation beam or...