ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,980, issued on March 17, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"IC package with field effect transistor" was invented by Makoto Shibuya (Beppu, Japan) and Kwang-Soo Kim (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC package includes an interconnect having a first platform and a second platform that are spaced apart. The IC package includes a die superposing a portion of the first platform of the interconnect. The die has a field effect transistor (FET), and a matrix of pads for the FET situated on a surface of the die. The matrix of pads having a row of source pads and a row of drain pads. A drain wire bond exten...