US Patent Issued to TEXAS INSTRUMENTS on June 9 for "High band-gap devices with a doped high band-gap gate electrode extension" (Texas Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,843, issued on June 9, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"High band-gap devices with a doped high band-gap gate electrode extension" was invented by Dong Seup Lee (McKinney, Texas) and Chang Soo Suh (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a GaN FET on a substrate such as silicon and a buffer layer of p-type GaN semiconductor material. The GaN FET includes a gate electrode extension of p-type GaN semiconductor material in electrical contact with the gate electrode. The gate electrode extension of p-type GaN semiconductor material in electrical contact with the gate electrode may imp...