ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,342, issued on June 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Integrated boot diode with high forward bias capability" was invented by Dong Seup Lee (McKinney, Texas), Sunglyong Kim (Allen, Texas) and Kyoung Min Lee (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device including an integrated boot diode and a depleted mode LDMOS transistor with a charge balance layer isolated from the body region and electrically in contact with a substrate. The connection of the charge balance layer of the depleted mode LDMOS transistor directly to the substrate or ground reference eliminates body diode turn-on from the bod...