US Patent Issued to TEXAS INSTRUMENTS on July 28 for "Auto-doping reduction in semiconductor structure" (Japanese, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,505, issued on July 28, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Auto-doping reduction in semiconductor structure" was invented by Takashi Shiga (Tsukuba, Japan), Hiromi Endoh (Inashiki City, Japan) and Tatsuya Tominari (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to reducing auto-doping in a semiconductor structure. In an example, semiconductor device structure includes a semiconductor substrate, a first epitaxial layer, and a second epitaxial layer. The semiconductor substrate has a first region and a second region. The first region includes a doped layer doped with a first dopant i...