US Patent Issued to TEXAS INSTRUMENTS on Feb. 24 for "Method for forming a field-effect transistor having a fractionally enhanced body structure" (Texas Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,767, issued on Feb. 24, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Method for forming a field-effect transistor having a fractionally enhanced body structure" was invented by Meng-Chia Lee (Allen, Texas), Sunglyong Kim (Allen, Texas), Seetharaman Sridhar (Richardson, Texas) and Sameer Pendharkar (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes an epitaxial layer over a semiconductor substrate. The epitaxial layer has a first conductivity type and a top surface. First, second and third trenches are located in the epitaxial layer. The trenches respectively include first, second and third field plates. ...