ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,380, issued on Feb. 17, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Contaminant collection on SOI" was invented by Honglin Guo (Dallas) and Frank John Sweeney (Rockwall, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer. An electronic device has an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A white space region adjacent the electronic device includes a first P-type region in the semiconductor layer and adjacent the surface. The P-type region has a first shee...