ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,694, issued on Aug. 11, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Integrated circuit with silicide formation blocking" was invented by Brian Ellingwood (Millcreek, Utah), Monte Nettles (Lehi, Utah) and Jeffrey S. Hansen (West Jordan, Utah).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an integrated circuit by forming a first silicon surface, forming a second silicon surface, forming a first silicide blocking layer along the first silicon surface and along the second silicon surface, and forming a second silicide blocking layer along the first silicide blocking layer. The forming of each of the first silicide blocking laye...