US Patent Issued to TetraMem on Oct. 27 for "Crossbar circuits including RRAM devices with minimized write disturbances" (California Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,366, issued on Oct. 27, was assigned to TetraMem Inc. (San Jose, Calif.).

"Crossbar circuits including RRAM devices with minimized write disturbances" was invented by Ning Ge (Danville, Calif.) and Hengfang Zhu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides for crossbar circuits with minimized write disturbance. A crossbar circuit may include a plurality of bit lines intersecting with a plurality of word lines, a plurality of cross-point devices, and one or more first capacitors operatively connected to the plurality of bit lines. Each of the plurality of cross-point devices is connected to at least o...