US Patent Issued to TDK on May 19 for "Magnetoresistance effect element and magnetic recording array for enhanced integration density" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,331, issued on May 19, was assigned to TDK Corp. (Tokyo).

"Magnetoresistance effect element and magnetic recording array for enhanced integration density" was invented by Yohei Shiokawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance effect element includes a wiring that extends in a first direction, a laminate that includes a first ferromagnetic layer connected to the wiring, a first conductive part and a second conductive part that sandwich the first ferromagnetic layer therebetween in a plan view in a lamination direction, and a resistor that has a geometrical center overlapping a geometrical center of the first conductiv...