ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,757, issued on Feb. 24, was assigned to TDK Corp. (Tokyo).
"Schottky barrier diode" was invented by Minoru Fujita (Tokyo), Jun Arima (Tokyo), Katsumi Kawasaki (Tokyo) and Jun Hirabayashi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky barrier diode includes an anode electrode which is brought into Schottky contact with a drift layer, a cathode electrode which is brought into ohmic contact with a semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, a metal film covering the inner wall of the trench through the insulating film and electrically connected to the anode electrode, and ...