ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,899, issued on Aug. 11, was assigned to TDK Corp. (Tokyo).

"Magneto resistive element with laminate component and magnetic memory" was invented by Zhenyao Tang (Tokyo) and Tomoyuki Sasaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magneto resistive element includes a laminate that includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer; a first conductive layer that is connected to a first surface of the laminate in a lamination direction; and a second conductive layer that is connected to a second surface opposite the f...