US Patent Issued to TDK on Aug. 11 for "Magnetization rotation element, magnetoresistive effect element, and magnetic memory" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,898, issued on Aug. 11, was assigned to TDK Corp. (Tokyo).

"Magnetization rotation element, magnetoresistive effect element, and magnetic memory" was invented by Yugo Ishitani (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetization rotation element includes a spin-orbit torque wiring, a first ferromagnetic layer, a first pillar, a second pillar, and a first conductive layer. The first ferromagnetic layer faces at least a part of the spin-orbit torque wiring. The first conductive layer is in contact with the spin-orbit torque wiring at a position not overlapping the first ferromagnetic layer when viewed from a laminating direction. The ...