US Patent Issued to TDK on April 7 for "Magneto-resistive element and method of manufacturing the magneto-resistive element" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,918, issued on April 7, was assigned to TDK Corp. (Tokyo).

"Magneto-resistive element and method of manufacturing the magneto-resistive element" was invented by Tomoyuki Sasaki (Tokyo) and Zhenyao Tang (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magneto-resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a first central region, and a first outer circumferential region disposed on an outer side of the first central region. A maximum thickness...