ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,715,779, issued on Aug. 25, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).
"Preparation method of quantum dot light emitting diode" was invented by Likuan Zhou (Huizhou, China) and Yixing Yang (Huizhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method of quantum dot light emitting diode, including steps of: providing a prefabricated device, and forming zinc oxide nanomaterial on the prefabricated device, to prepare an electron transport layer; and performing heat treatment to the processed device, such that an amount of surface hydroxyl groups of the electron transport layer is 0.15-0.6. Through the heat treatment ...