ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,361, issued on Feb. 17, was assigned to TAMURA Corp. (Tokyo).
"Schottky barrier diode with high withstand voltage" was invented by Masaru Takizawa (Tokyo) and Akito Kuramata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky barrier diode, including a first n-type semiconductor layer including a Beta-Ga2O3-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a Beta-Ga2O3-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determ...