US Patent Issued to Taiwan Semicondutor Manufacturing on Aug. 25 for "Nanosheet channel formation method and structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,785, issued on Aug. 25, was assigned to Taiwan Semicondutor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nanosheet channel formation method and structure" was invented by Da-Yuan Lee (Jhubei, Taiwan) and Weng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a nanoFET device and method for forming the same, the nanoFET having channel regions which have been thinned during a gate replacement process to remove etching residue. In some embodiments, the channel regions become dog bone shaped. In some embodiments, the ends of the channel regions have vertical protrusions or horns resulting from a previous trimming pr...