US Patent Issued to TAIWAN SEMICONDUCTOR MNUFACTURING on Nov. 3 for "Semiconductor device with a source/drain feature having a dielectric region therein" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,331, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MNUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with a source/drain feature having a dielectric region therein" was invented by Feng-Ching Chu (Pingtung County, Taiwan), Wei-Yang Lee (Taipei City, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Yen-Ming Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices formed thereof that include a fin structure extending from a substrate and a gate structure is formed over the fin structure. An epitaxial feature is formed over the fin structure adjacent the gate structure. The epitaxial feat...