US Patent Issued to Taiwan Semiconductor Mnaufacturing on April 7 for "Semiconductor devices and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,795, issued on April 7, was assigned to Taiwan Semiconductor Mnaufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and method of forming the same" was invented by Yu-Ting Hsiao (Taichung City, Taiwan), Min-Hsiu Hung (Tainan City, Taiwan), Wei-Jung Lin (Hsinchu City, Taiwan), Chih-Wei Chang (Hsin-Chu, Taiwan) and Ming-Hsing Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes the following steps. A first layer is provided, wherein a material of the first layer is amorphous or single crystal. A first conductive layer is directly deposited on the first layer, wherein the fir...