US Patent Issued to Taiwan Semiconductor Manuffacturing on June 23 for "High aspect ratio back side deep trench isolaton structure with substrate-embedded metal grid and no pinch off" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,733, issued on June 23, was assigned to Taiwan Semiconductor Manuffacturing Co. Ltd. (Hsinchu, Taiwan).

"High aspect ratio back side deep trench isolaton structure with substrate-embedded metal grid and no pinch off" was invented by Tsung Hsien Tsai (Hsinchu, Taiwan), Cheng Yu Huang (Hsinchu, Taiwan), Jen-Cheng Liu (Hsin-Chu City, Taiwan), Keng-Yu Chou (Kaohsiung City, Taiwan), Ming-En Chen (Tainan City, Taiwan) and Shyh-Fann Ting (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process of forming a back side deep trench isolation structure for an image sensing device includes etching first trenches in the back side of a semicon...