US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Under epitaxy isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,239, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Under epitaxy isolation structure" was invented by Chih-Hung Sun (Hsinchu, Taiwan), Wen-Kai Lin (Yilan, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a two-tiered trench isolation structure under the epitaxial regions (e.g., epitaxial source/drain regions) of a nano-FET transistor device, and methods of forming the same. The first tier provides an isolation structure with a low k value. The second tier provides an isolati...