ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,611, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Spacer film scheme for polarization improvement" was invented by Tzu-Yu Lin (Taoyuan City, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode and a high-k dielectric material disposed over the lower electrode. An upper electrode is disposed over a central region of the high-k dielectric material and a dielectric spacer is arranged on a peripheral region of the high-k dielectric material. The high-k dielectric m...