US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,193, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture" was invented by En-Shuo Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate including a p-type region and an n-type region, wherein the n-type region is in the p-type region and a distance between a top surface of the substrate and the n-type region is less than a distance between the top surface of the substrate and the p-type region. A buffer layer is over ...