US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Semiconductor isolation structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,281, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor isolation structures and methods of forming the same" was invented by Chung-Liang Cheng (Changhua City, Taiwan), Sheng-Chan Li (Tainan City, Taiwan), Sheng-Chau Chen (Tainan City, Taiwan), Chung-Yi Yu (Hsin-Chu, Taiwan) and Cheng-Yuan Tsai (Chu-Pei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result...