ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,198, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Li-Li Su (ChuBei City, Taiwan), Wei-Min Liu (Hsinchu, Taiwan), Wei Hao Lu (Taoyuan City, Taiwan), Chien-I Kuo (Zhubei City, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a firs...