US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor device and fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,253, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and fabricating the same" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan) and Ting-Hung Hsu (Miaoli, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source...