ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,473, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Selective deposition of barrier layer" was invented by Hsin-Yen Huang (New Taipei City, Taiwan), Hai-Ching Chen (Hsinchu City, Taiwan) and Shau-Lin Shue (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the ...