US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Phase change material switch with ovonic threshold switching material selector and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,411, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase change material switch with ovonic threshold switching material selector and methods for forming the same" was invented by Hung-Ju Li (Hsinchu City, Taiwan), Kuo-Ching Huang (Hsinchu City, Taiwan), Yu-Wei Ting (Taipei City, Taiwan) and Kuo-Pin Chang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Phase change material (PCM) switches and methods of fabrication thereof that include a phase change material layer and a selector having a first electrode and an ovonic threshold switching (OTS) material layer. The first electrod...