US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,238, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device" was invented by Shih-Chien Liu (Hsinchu, Taiwan), Yao-Chung Chang (Zhubei City, Taiwan) and Chun Lin Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic sou...