US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Methods for forming devices with shallow source/drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,208, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for forming devices with shallow source/drain contacts" was invented by Chia-Hao Chang (Hsinchu, Taiwan), Jia-Chuan You (Hsinchu, Taiwan), Yu-Chun Liu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is generally related to semiconductor devices, and more particularly to field-effect transistors (FETs). A substrate includes fin-like protruding portions in which source/drain regions are formed on the fin-like protruding portions...