ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,231, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing semiconductor device with reduced cell width" was invented by Jia-Chuan You (Taoyuan County, Taiwan), Chia-Hao Chang (Hsinchu City, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed o...