US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Method of forming a nano-FET semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,234, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming a nano-FET semiconductor device" was invented by Li-Chi Yu (Jhubei, Taiwan), Cheng-I Chu (Taipei, Taiwan), Chia-Hsuan Wang (Hsinchu, Taiwan), Chen-Fong Tsai (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process ...