US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "FinFET with first fin on top of second fin" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,250, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-Chu, Taiwan).

"FinFET with first fin on top of second fin" was invented by Jhon-Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a substrate, a fin structure, a source/drain region, and a gate structure. The fin structure includes a first-stage fin region, a second-stage fin region, and a third-stage fin region. The second-stage fin region is under the first-stage fin region. The third-stage fin region is under the second-stage fin region. The source/drain region is on a top surface of the sec...